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Step 05 Metallization

RF Magnetron Sputterer

MEDIUM ● ALD is preferred for TiN; sputterer provides flexibility for metals and dielectrics not covered by other tools

Role in QLT Fabrication

RF magnetron sputtering deposits metallic and dielectric thin films by bombarding a solid target with Ar⁺ ions from a plasma. The ejected atoms condense on the substrate. For QLT, the sputterer serves multiple roles:

  • TiN heater backup ● reactive sputtering (Ti target + N₂/Ar) produces TiN faster than ALD but with less uniformity. Useful for rapid process development and fallback if ALD tool is down.
  • Cr/Ti adhesion layers ● thin (5–10 nm) adhesion layers under Au contact pads when e-beam evaporator is unavailable or when different adhesion chemistry is needed.
  • SiO₂ thin patches ● RF sputtering from SiO₂ target for localized cladding repairs or test structures (not primary cladding ● PECVD #24 handles that).
  • Future materials ● LiNbO₃, PZT, or other piezoelectric/dielectric films for Poovey switch development (sputtering is a common deposition method for these materials).

Films Needed

FilmModeTargetGasThicknessPurpose
TiNReactive RF/DCTi target + N₂/ArN₂/Ar (10–30% N₂)20 nmHeater resistors (backup to ALD)
CrDCCr target + ArAr only5 nmAdhesion layer under Au
TiDCTi target + ArAr only10 nmAdhesion layer (alternative to Cr)
SiO₂RFSiO₂ target + ArAr only100–500 nmThin cladding patch / test structures
Al₂O₃RFAl₂O₃ target + ArAr only10–50 nmPassivation (alternative to ALD)
LiNbO₃RFLiNbO₃ target + Ar/O₂Ar/O₂ mix200–500 nmFuture: Poovey switch piezoelectric

Sputtering vs. ALD for TiN ● Detailed Comparison

ParameterRF SputteringALD (#23)
Deposition rate20–50 nm/min (FAST)0.05 nm/cycle (~0.3 nm/min, SLOW)
Thickness control± 5 nm± 0.1 nm (50× better)
Conformality~60% (line-of-sight component)> 99% (self-limiting surface reaction)
Step coveragePoor in trenches and over topographyExcellent (> 95%)
Resistivity controlVariable (100–500 μΩ·cm)Tight (150–250 μΩ·cm)
Film stressHigher (compressive, tunable with power/pressure)Lower, well-controlled
Equipment cost$15k–$200k$45k–$350k
ThroughputHigher (minutes per film)Lower (67 min for 20 nm)
VerdictGood for flat surfaces; fast; flexiblePreferred for our precision heaters

Recommended Configuration

ParameterSpecification
ManufacturerAJA International, Inc., Scituate, MA
ModelATC Orion 5 (compact HV sputtering system)
Websiteajaint.com
Contact[email protected]
Chamber14" diameter, con-focal geometry
Sputter sourcesUp to 5 × 3" magnetron sources (con-focal) or up to 8 × 2" sources
Source typesStiletto (HV) and A300-XP (UHV) magnetron sputtering sources
Source featuresTuning chimneys (patent pending); flip-top shutters; gas injection rings
Target change2-screw removal ● fast, tool-free target access
Power optionsRF (13.56 MHz), DC, Pulsed DC, HiPIMS ● customer selectable per source
Substrate holderMotorized rotation (0–40 rpm); up to 6" (150 mm) diameter
Substrate heatingRadiant, up to 800–1000°C (size-dependent)
Substrate coolingH₂O or LN₂ options
Substrate biasRF or DC bias capability
Z-motionIn-situ motorized, 50 mm travel (working distance adjustment)
Gas linesUp to 4 MFC-controlled (Ar, O₂, N₂, H₂ etc.)
VacuumTurbomolecular pump + dry backing; HV (10⁻⁷ Torr) or UHV (10⁻¹⁰ Torr)
Load-lockTurbopumped load-lock available
ControlSemi-automatic or LabVIEW-based computer control
Uniformity± 2.5% across 6" diameter (con-focal geometry)
Multi-chamberCan connect to other Orion/ATC systems for multi-technique configurations
Deposition ratesUp to 18 Å/s (Au), 9 Å/s (Cu), 0.16 Å/s (Al₂O₃ RF) with 2" sources
Price range$125,000–$350,000 (per AJA website, 2026)
Lead time8–14 weeks (standard modules often in stock)
ParameterRF SputteringALD (#23)
Deposition rate20–50 nm/min (FAST)0.05 nm/cycle (~0.3 nm/min, SLOW)
Thickness control± 5 nm± 0.1 nm (50× better)
Conformality~60% (line-of-sight component)> 99% (self-limiting surface reaction)
Step coveragePoor in trenches and over topographyExcellent (> 95%)
Resistivity controlVariable (100–500 μΩ·cm)Tight (150–250 μΩ·cm)
Film stressHigher (compressive, tunable with power/pressure)Lower, well-controlled
Equipment cost$15k–$200k$45k–$350k
ThroughputHigher (minutes per film)Lower (67 min for 20 nm)
VerdictGood for flat surfaces; fast; flexiblePreferred for our precision heaters
ParameterSpecification
ManufacturerAJA International, Inc., Scituate, MA
ModelATC Orion 5 (compact HV sputtering system)
Websiteajaint.com
Contact[email protected]
Chamber14" diameter, con-focal geometry
Sputter sourcesUp to 5 × 3" magnetron sources (con-focal) or up to 8 × 2" sources
Source typesStiletto (HV) and A300-XP (UHV) magnetron sputtering sources
Source featuresTuning chimneys (patent pending); flip-top shutters; gas injection rings
Target change2-screw removal ● fast, tool-free target access
Power optionsRF (13.56 MHz), DC, Pulsed DC, HiPIMS ● customer selectable per source
Substrate holderMotorized rotation (0–40 rpm); up to 6" (150 mm) diameter
Substrate heatingRadiant, up to 800–1000°C (size-dependent)
Substrate coolingH₂O or LN₂ options
Substrate biasRF or DC bias capability
Z-motionIn-situ motorized, 50 mm travel (working distance adjustment)
Gas linesUp to 4 MFC-controlled (Ar, O₂, N₂, H₂ etc.)
VacuumTurbomolecular pump + dry backing; HV (10⁻⁷ Torr) or UHV (10⁻¹⁰ Torr)
Load-lockTurbopumped load-lock available
ControlSemi-automatic or LabVIEW-based computer control
Uniformity± 2.5% across 6" diameter (con-focal geometry)
Multi-chamberCan connect to other Orion/ATC systems for multi-technique configurations
Deposition ratesUp to 18 Å/s (Au), 9 Å/s (Cu), 0.16 Å/s (Al₂O₃ RF) with 2" sources
Price range$125,000–$350,000 (per AJA website, 2026)
Lead time8–14 weeks (standard modules often in stock)
ParameterSpecification
ManufacturerKurt J. Lesker Company, Jefferson Hills, PA
ModelPRO Line PVD 75 (magnetron sputtering configuration)
Websitelesker.com
Chamber304L SS box, 15.25" × 16.5" × 24" (75 L), with 10 spare CF ports
Sputter sourcesUp to 6 × Torus® 2"/3" sources, or up to 4 × 4" Mag-Keeper sources
Mag-KeeperZero o-rings in cathode body; magnetically coupled target; dome shutter
Power2 kW pulsed DC per source; RF power supplies available
SubstrateUp to 6" (150 mm) with rotation (20 rpm), heating to 850°C, RF bias
Pumping790 L/s turbo (Pfeiffer) standard; optional CTI-8F 1500 L/s cryopump
Base pressureStandard: 10⁻⁷ Torr; UHV option: 10⁻¹⁰ Torr
Uniformity≤ ± 5% (sputtering) across 150 mm
Gas control2-channel upstream MFC with pressure control
Load-lockAutomated transfer available
Footprint47" × 35" × 75" (1194 × 889 × 1905 mm)
ComplianceCE, CSA; 12-month warranty
Price range$80,000–$150,000 (estimated, 2026)
Lead time10–14 weeks
400+ units in service worldwide

Process Integration

QLT PROCESS FLOW ● RF Magnetron Sputterer (Step B6-alt / Adhesion Layers):

STEP 1: Target Installation
├── Mount required target(s) in magnetron source(s)
│   (e.g., Ti in gun #1, Cr in gun #2, SiO₂ in gun #3)
├── AJA: 2-screw removal for quick target change
└── Verify target bonding to backing plate (for heat transfer)

STEP 2: Load Substrate
├── Mount chip on substrate holder (center position)
├── Verify rotation and heating if needed
└── Close chamber (or load through load-lock)

STEP 3: Pump Down
├── Rough to < 100 mTorr
├── Turbo pump to base pressure < 5×10⁻⁶ Torr
└── Wait for stable base (5–15 min)

STEP 4: Pre-Sputter (Target Conditioning)
├── Flow Ar at 20 sccm; set pressure 5 mTorr
├── Strike plasma on target at 100 W
├── Pre-sputter with shutter closed for 5 min
└── Removes oxide layer from target surface

STEP 5: Deposition
├── Open shutter; start substrate rotation
├── For reactive TiN: add N₂ flow (5 sccm), monitor with OES
├── Deposit to target thickness (QCM or timed)
└── Close shutter when done

STEP 6: Sequential Layers (if needed)
├── Switch to next target gun (motorized or manual index)
├── Pre-sputter 2 min; then deposit
└── Repeat for all layers

STEP 7: Cool & Unload
├── Wait 5 min for substrate cooling
├── Vent with dry N₂
└── Remove chip for next process step

STEP 8: Quality Verification
├── Profilometer: verify thickness
├── 4-point probe: verify resistivity (TiN, metals)
├── Tape test: verify adhesion
└── XRD/EDS: verify composition (if TiN)

Vendor Options & Pricing

New System Pricing

ModelManufacturerTargetsPrice (2025–2026)Lead Time
AJA ATC Orion 5AJA International (MA)3–5 × 3" guns$125,000–$200,0008–12 weeks
AJA ATC Orion 8AJA International (MA)5–8 × 2" guns$175,000–$350,00010–14 weeks
Kurt Lesker PRO Line PVD 75Lesker (PA)4–6 Torus® guns$80,000–$150,00010–14 weeks
Denton Vacuum DiscoveryDenton (NJ)2–4 guns$60,000–$120,0008–12 weeks
Angstrom Engineering AmodAngstrom (Canada)4–6 guns$100,000–$180,00010–16 weeks

Refurbished Market

ModelConditionPriceLead TimeSource
CVC 601 / ASTUsed, various$10,000–$25,0002–4 weeksLabX, Surplus Record
Perkin-Elmer 2400 / 4450Used$8,000–$20,0002–4 weeksLabX, Used-Line
MRC / RandexUsed$5,000–$15,0001–3 weeksSurplus Record
Denton DV-502A (with sputter head)Used$5,000–$15,0001–3 weekseBay, Surplus Record
AJA Orion (early models)Used, rare$40,000–$80,0004–8 weeksLabX
Kurt Lesker PVD 75 (used)As-is$25,000–$50,0002–6 weeksSemiStar, LabX

Vendor Directory

VendorTypeContactNotes
AJA InternationalOEMajaint.com / Scituate, MAMarket leader in research sputtering
Kurt J. LeskerOEMlesker.com / Jefferson Hills, PA400+ PVD 75 units installed; Torus® sources
Denton VacuumOEMdentonvacuum.com / Moorestown, NJDiscovery series; compact
Angstrom EngineeringOEMangstromengineering.com / Kitchener, ONAmod platform; multi-technique
LabXUsed marketplacelabx.comAJA, Lesker, CVC listings
Used-LineAggregatorused-line.comPerkin-Elmer, CVC
Surplus RecordIndustrial surplussurplusrecord.comOlder systems (MRC, Randex)
SemiStarUsed dealersemistarcorp.comPVD 75 and others
CAE OnlineUsed semiconductorcaeonline.comSputtering system listings
FabSurplusUsed semiconductorfabsurplus.comIndustrial surplus

AJA Pricing Context

AJA publicly lists their price ranges on their website (rare in the industry):

  • Orion Series: $125,000–$350,000
  • ATC Series (larger): $175,000–$950,000+

This transparency is helpful for budgeting. The Orion 5 at the $125k–$200k entry point delivers 3–5 con-focal sources with excellent uniformity for research/pilot work.

Facility Requirements

Space and Utilities

ParameterSpecification
Power3-phase, 208V, 30A (RF supply + DC magnetron + pump)
RF power supply13.56 MHz, 300–600 W per source (typically 1–2 active simultaneously)
DC power supply0–1000V, 0–2A per source (for metal sputtering)
Pulsed DCOptional; reduces arcing on dielectric targets
GasesAr (primary, 99.999%); N₂ (reactive TiN); O₂ (reactive oxides)
Gas deliveryMFC controlled, 4 channels minimum
CoolingRecirculating chiller, 3–5 kW thermal ● MANDATORY
Cooling reasonMagnetron guns generate significant heat; targets can crack without cooling
VacuumTurbomolecular pump + dry backing pump (typically integrated)
ExhaustPump exhaust to building vent (no toxic byproducts for Ar-only sputtering)
N₂ reactiveIf reactive sputtering with N₂: vent to exhaust; no special scrubbing needed
Floor space1.2 m × 1.2 m (chamber + electronics rack)
With chiller + gas panel2.0 m × 1.5 m total
Weight200–400 kg (Orion 5); up to 600 kg (PVD 75)
VibrationNot sensitive
TemperatureStandard lab 18–25°C

Electrical Detail

ComponentPower DrawNotes
RF power supply (13.56 MHz)300–600 WPer source; typically 1–2 active
DC power supply200–500 WFor metal sputtering
Turbo pump300–500 WContinuous
Roughing pump500–800 WContinuous
Substrate heater (if used)500–2000 WDuring deposition
Chiller1000–3000 WContinuous
Control electronics200–500 WContinuous
TOTAL SYSTEM3–8 kW typicalModerate power consumer

Safety & Handling

Hazard Summary

HazardSourceRisk LevelControls
RF radiation13.56 MHz generatorLOWShielded chamber; interlocks on all doors
Electrical shockDC/RF power suppliesMEDIUMLOTO for target changes; interlocked
Compressed gasAr, N₂, O₂ cylindersLOWStandard cylinder handling; secured to wall
Hot surfacesMagnetron guns, substrate heaterMEDIUMCool-down SOP before target change
Target debrisBroken or cracked targetsLOWInspect targets before loading; cooling mandatory
Plasma UV/visibleSputtering plasma glowLOWDon't stare directly at plasma through viewport

Target Handling

MaterialSpecial HandlingStorage
TiNone ● safe metalAmbient; sealed bag to reduce oxidation
CrHexavalent Cr concerns (Cr⁶⁺) during sputteringStandard storage; EH&S review for Cr sputtering
SiO₂Ceramic ● fragile; can crack from thermal shockHandle with care; ramp power slowly
Al₂O₃Ceramic ● fragileHandle with care
LiNbO₃Ceramic ● fragile; expensiveSealed container; handle with gloves
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